MC68HC912D60 Motorola, MC68HC912D60 Datasheet - Page 102
MC68HC912D60
Manufacturer Part Number
MC68HC912D60
Description
Microcontrollers
Manufacturer
Motorola
Datasheet
1.MC68HC912D60.pdf
(460 pages)
- Current page: 102 of 460
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Flash Memory
Technical Data
102
Use this step-by-step procedure to program a row of Flash memory.
This program sequence is repeated throughout the memory until all data
is programmed. For minimum overall programming time and least
program disturb effect, the sequence should be part of an intelligent
operation which iterates per row.
10. Wait for a time, t
11. Clear the HVEN bit.
12. After time, t
1. Set the PGM bit. This configures the memory for program
2. Write to any aligned word Flash address within the row address
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time, t
6. Write one data word (two bytes) to the next aligned word Flash
7. Wait for a time, t
8. Repeat steps 6 and 7 until all the words within the row are
9. Clear the PGM bit.
Freescale Semiconductor, Inc.
For More Information On This Product,
operation and enables the latching of address and data for
programming.
range desired (with any data) to select the row.
address to be programmed. If BOOTP is asserted, an attempt to
program an address in the boot block will be ignored.
programmed.
mode again.
Go to: www.freescale.com
RCV
Flash Memory
(min 1µs), the memory can be accessed in read
NVS
PGS
FPGM
NVH
(min. 10µs).
(min. 5µs).
(min. 5µs).
(min. 30µs – max. 40µs).
MC68HC912D60A — Rev 3.0
MOTOROLA
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