MC68HC908AZ32ACFU MOTOROLA [Motorola, Inc], MC68HC908AZ32ACFU Datasheet - Page 69

• Manufacturer Part Number: MC68HC908AZ32ACFU
• Description: Microcontrollers
• Manufacturer: MOTOROLA [Motorola, Inc]

4.6 FLASH Mass Erase Operation
68HC908AZ32A — Rev 0.0
MOTOROLA
NOTE:
NOTE:
Use this step-by-step procedure to erase the entire FLASH memory to
read as logic 1:
If the address written to in Step 3 is within address space protected by
the FLASH Block Protect Register (FLBPR), no erase will occur.
A. Programming and erasing of FLASH locations can not be performed
by code being executed from the same FLASH array.
B. While these operations must be performed in the order shown, other
unrelated operations may occur between the steps. Care must be taken
however to ensure that these operations do not access any address
within the FLASH array memory space such as the COP Control
Register (COPCTL) at $FFFF.
C. It is highly recommended that interrupts be disabled during
program/erase operations.
10. Wait for a time, t
1. Set both the ERASE bit and the MASS bit in the FLASH Control
2. Read the FLASH Block Protect Register (FLBPR).
3. Write to any FLASH address within the FLASH array with any
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
Freescale Semiconductor, Inc.
For More Information On This Product,
Register (FLCR).
data.
normal read mode.
Go to: www.freescale.com
FLASH Memory
RCV
NVS
MERASE
NVHL
.
, after which the memory can be accessed in
.
.
FLASH Mass Erase Operation
Advance Information
FLASH Memory
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