MT48H32M32LFB5-6 IT:B Micron, MT48H32M32LFB5-6 IT:B Datasheet - Page 14

• Manufacturer Part Number: MT48H32M32LFB5-6 IT:B
• Manufacturer: Micron

Table 8: I
Notes 1, 5, 9, and 10 apply to all parameters and conditions; V
PDF: 09005aef8404b23d
y68m_mobile_lpsdr.pdf – Rev. D 1/11 EN
Parameter/Condition
Self refresh
CKE = LOW;
Address and control inputs are stable;
Data bus inputs are stable
DD7
t
CK =
Specifications and Conditions ( x32)
t
CK (MIN);
Notes:
10. Values for I
1. A full initialization sequence is required before proper device operation is ensured.
2. I
3. The I
4. Address transitions average one transition every two clocks.
5. Measurement is taken 500ms after entering into this operating mode to allow tester
6. Other input signals are allowed to transition no more than once every two clocks and
7. CKE is HIGH during REFRESH command period
8. Typical values at 25˚C (not a maximum value).
9. Enables on-die refresh and address counters.
minimum cycle time and the outputs open.
quency alteration for the test condition.
measuring unit settling time.
are otherwise at valid V
ture range. All other I
DD
is dependent on output loading and cycle rates. Specified values are obtained with
DD
current will increase or decrease proportionally according to the amount of fre-
DD7
Half array, 85˚C
Half array, 45˚C
1/16 array, 85˚C
1/16 array, 45˚C
Full array, 85˚C
Full array, 45˚C
1/4 array, 85˚C
1/4 array, 45˚C
1/8 array, 85˚C
1/8 array, 45˚C
85˚C full array and partial array are guaranteed for the entire tempera-
DD7
IH
values are estimated.
14
or V
DD
Electrical Specifications – I
/V
IL
levels.
DDQ
Symbol
= 1.70–1.95V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
I
DD7
1Gb: x32 Mobile LPSDR SDRAM
t
Low Power
RFC (MIN) else CKE is LOW.
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
© 2010 Micron Technology, Inc. All rights reserved.
Standard
1300
1000
450
350
900
300
800
250
800
250
DD
Parameters
Units
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA