MT48H32M32LFB5-6 IT:B Micron, MT48H32M32LFB5-6 IT:B Datasheet - Page 25

• Manufacturer Part Number: MT48H32M32LFB5-6 IT:B
• Manufacturer: Micron

READ
Figure 7: READ Command
PDF: 09005aef8404b23d
y68m_mobile_lpsdr.pdf – Rev. D 1/11 EN
Note:
The READ command is used to initiate a burst read access to an active row. The values
on the BA0 and BA1 inputs select the bank; the address provided selects the starting col-
umn location. The value on input A10 determines whether auto precharge is used. If au-
to precharge is selected, the row being accessed is precharged at the end of the READ
burst; if auto precharge is not selected, the row remains open for subsequent accesses.
Read data appears on the DQ subject to the logic level on the DQM inputs two clocks
earlier. If a given DQM signal was registered HIGH, the corresponding DQ will be High-
Z two clocks later; if the DQM signal was registered LOW, the DQ will provide valid data.
BA0, BA1
Address
1. EN AP = enable auto precharge, DIS AP = disable auto precharge.
RAS#
CAS#
A10
WE#
CKE
CLK
CS#
1
HIGH
Column address
Bank address
DIS AP
EN AP
25
Don’t Care
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1Gb: x32 Mobile LPSDR SDRAM
© 2010 Micron Technology, Inc. All rights reserved.
Commands