MT48H32M32LFB5-6 IT:B Micron, MT48H32M32LFB5-6 IT:B Datasheet - Page 55
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MT48H32M32LFB5-6 IT:B
Manufacturer Part Number
MT48H32M32LFB5-6 IT:B
Description
Manufacturer
Micron
Datasheet
1.MT48H32M32LFB5-6_ITB.pdf
(81 pages)
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Figure 28: WRITE-to-PRECHARGE
PDF: 09005aef8404b23d
y68m_mobile_lpsdr.pdf – Rev. D 1/11 EN
Note:
Fixed-length WRITE bursts can be truncated with the BURST TERMINATE command.
When truncating a WRITE burst, the input data applied coincident with the BURST
TERMINATE command is ignored. The last data written (provided that DQM is LOW at
that time) will be the input data applied one clock previous to the BURST TERMINATE
command. This is shown in Figure 29 (page 56), where data n is the last desired data
element of a longer burst.
t
t
Command
Command
WR @
WR @
1. In this example DQM could remain LOW if the WRITE burst is a fixed length of two.
Address
Address
DQM
DQM
CLK
t
t
DQ
DQ
CK ≥ 15ns
CK < 15ns
WRITE
Bank a,
WRITE
Bank a,
Col n
D
Col n
D
T0
n
n
IN
IN
n + 1
n + 1
NOP
NOP
D
D
T1
IN
IN
t
WR
55
PRECHARGE
(a or all)
Bank
NOP
T2
t
WR
PRECHARGE
Micron Technology, Inc. reserves the right to change products or specifications without notice.
(a or all)
Bank
T3
NOP
1Gb: x32 Mobile LPSDR SDRAM
t RP
NOP
NOP
T4
t RP
ACTIVE
Bank a,
NOP
Row
T5
© 2010 Micron Technology, Inc. All rights reserved.
WRITE Operation
Bank a,
Don’t Care
ACTIVE
NOP
Row
T6
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