MT48H32M32LFB5-6 IT:B Micron, MT48H32M32LFB5-6 IT:B Datasheet - Page 26

• Manufacturer Part Number: MT48H32M32LFB5-6 IT:B
• Manufacturer: Micron

WRITE
Figure 8: WRITE Command
PDF: 09005aef8404b23d
y68m_mobile_lpsdr.pdf – Rev. D 1/11 EN
Note:
The WRITE command is used to initiate a burst write access to an active row. The values
on the BA0 and BA1 inputs select the bank; the address provided selects the starting col-
umn location. The value on input A10 determines whether auto precharge is used. If au-
to precharge is selected, the row being accessed is precharged at the end of the write
burst; if auto precharge is not selected, the row remains open for subsequent accesses.
Input data appearing on the DQ is written to the memory array, subject to the DQM in-
put logic level appearing coincident with the data. If a given DQM signal is registered
LOW, the corresponding data is written to memory; if the DQM signal is registered
HIGH, the corresponding data inputs are ignored and a WRITE is not executed to that
byte/column location.
BA0, BA1
Address
1. EN AP = enable auto precharge, DIS AP = disable auto precharge.
RAS#
CAS#
A10
WE#
CKE
CLK
CS#
1
HIGH
Valid address
Column address
Bank address
DIS AP
EN AP
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1Gb: x32 Mobile LPSDR SDRAM
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Commands