MT48H32M32LFB5-6 IT:B Micron, MT48H32M32LFB5-6 IT:B Datasheet - Page 24
![no-image](/images/no-image-200.jpg)
MT48H32M32LFB5-6 IT:B
Manufacturer Part Number
MT48H32M32LFB5-6 IT:B
Description
Manufacturer
Micron
Datasheet
1.MT48H32M32LFB5-6_ITB.pdf
(81 pages)
- Current page: 24 of 81
- Download datasheet (3Mb)
COMMAND INHIBIT
NO OPERATION (NOP)
LOAD MODE REGISTER (LMR)
ACTIVE
Figure 6: ACTIVE Command
PDF: 09005aef8404b23d
y68m_mobile_lpsdr.pdf – Rev. D 1/11 EN
The COMMAND INHIBIT function prevents new commands from being executed by
the device, regardless of whether the CLK signal is enabled. The device is effectively de-
selected. Operations already in progress are not affected.
The NO OPERATION (NOP) command is used to perform a NOP to the selected device
(CS# is LOW). This prevents unwanted commands from being registered during idle or
wait states. Operations already in progress are not affected.
The mode registers are loaded via inputs A[n:0] (where An is the most significant ad-
dress term), BA0, and BA1(see Mode Register (page 36)). The LOAD MODE REGISTER
command can only be issued when all banks are idle and a subsequent executable com-
mand cannot be issued until
The ACTIVE command is used to activate a row in a particular bank for a subsequent
access. The value on the BA0, BA1 inputs selects the bank, and the address provided se-
lects the row. This row remains active for accesses until a PRECHARGE command is is-
sued to that bank. A PRECHARGE command must be issued before opening a different
row in the same bank.
BA0, BA1
Address
RAS#
CAS#
WE#
CKE
CLK
CS#
HIGH
Bank address
Row address
t
24
MRD is met.
Don’t Care
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1Gb: x32 Mobile LPSDR SDRAM
© 2010 Micron Technology, Inc. All rights reserved.
Commands
Related parts for MT48H32M32LFB5-6 IT:B
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
![MT29F1G16ABBDAH4-IT:D](/images/no-image3.png)
Part Number:
Description:
VFBGA 63/I°//MICRON NAND FLASH 1Gb Mass Storage
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4264](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT48LC4M32B2](/images/no-image3.png)
Part Number:
Description:
SYNCHRONOUS DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT28F640J3](/images/no-image3.png)
Part Number:
Description:
Q-FLASHTM MEMORY
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4C4M4A1DJ-6](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4C4M4A1TG-6](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4C4M4B1DJ-5](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4C4M4B1DJ-6](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4A1DJ-6](/images/no-image3.png)
Part Number:
Description:
4Meg x 4, 3,3V FPM DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4A1TG-6](/images/no-image3.png)
Part Number:
Description:
4Meg x 4, 3,3V FPM DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4B1DJ-5](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4B1TG-5](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4E8DJ-5](/images/no-image3.png)
Part Number:
Description:
4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 50ns
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4E8TG-5](/images/no-image3.png)
Part Number:
Description:
4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 50ns
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4E8TG-6](/images/no-image3.png)
Part Number:
Description:
4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 60ns
Manufacturer:
Micron Semiconductor Products
Datasheet: