MT48H32M32LFB5-6 IT:B Micron, MT48H32M32LFB5-6 IT:B Datasheet - Page 61
![no-image](/images/no-image-200.jpg)
MT48H32M32LFB5-6 IT:B
Manufacturer Part Number
MT48H32M32LFB5-6 IT:B
Description
Manufacturer
Micron
Datasheet
1.MT48H32M32LFB5-6_ITB.pdf
(81 pages)
- Current page: 61 of 81
- Download datasheet (3Mb)
Figure 33: READ With Auto Precharge Interrupted by a READ
PDF: 09005aef8404b23d
y68m_mobile_lpsdr.pdf – Rev. D 1/11 EN
Internal
states
Command
Note:
Address
Bank m
Bank n
CLK
DQ
WRITE with auto precharge interrupted by a WRITE (with or without auto precharge)
A WRITE to bank m will interrupt a WRITE on bank n when registered. The precharge to
bank n will begin after
istered. The last valid data WRITE to bank n will be data registered one clock prior to a
WRITE to bank m (see Figure 40 (page 67)).
1. DQM is LOW.
Page active
NOP
T0
READ - AP
Page active
Bank n,
Bank n
T1
Col a
READ with burst of 4
t
WR is met, where
T2
CL = 3 (bank n)
NOP
61
READ - AP
Bank m,
T3
Bank m
Col d
Interrupt burst, precharge
READ with burst of 4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
T4
WR begins when the WRITE to bank m is reg-
CL = 3 (bank m)
NOP
t
RP - bank n
D
OUT
a
1Gb: x32 Mobile LPSDR SDRAM
T5
NOP
D
a + 1
OUT
PRECHARGE Operation
T6
NOP
D
© 2010 Micron Technology, Inc. All rights reserved.
OUT
d
Idle
T7
Don’t Care
NOP
t RP - bank m
D
Precharge
d + 1
OUT
Related parts for MT48H32M32LFB5-6 IT:B
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
![MT29F1G16ABBDAH4-IT:D](/images/no-image3.png)
Part Number:
Description:
VFBGA 63/I°//MICRON NAND FLASH 1Gb Mass Storage
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4264](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT48LC4M32B2](/images/no-image3.png)
Part Number:
Description:
SYNCHRONOUS DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT28F640J3](/images/no-image3.png)
Part Number:
Description:
Q-FLASHTM MEMORY
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4C4M4A1DJ-6](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4C4M4A1TG-6](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4C4M4B1DJ-5](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4C4M4B1DJ-6](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4A1DJ-6](/images/no-image3.png)
Part Number:
Description:
4Meg x 4, 3,3V FPM DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4A1TG-6](/images/no-image3.png)
Part Number:
Description:
4Meg x 4, 3,3V FPM DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4B1DJ-5](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4B1TG-5](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4E8DJ-5](/images/no-image3.png)
Part Number:
Description:
4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 50ns
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4E8TG-5](/images/no-image3.png)
Part Number:
Description:
4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 50ns
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4E8TG-6](/images/no-image3.png)
Part Number:
Description:
4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 60ns
Manufacturer:
Micron Semiconductor Products
Datasheet: