MCR908JK1ECPE Freescale Semiconductor, MCR908JK1ECPE Datasheet - Page 163

• Manufacturer Part Number: MCR908JK1ECPE
• Description: IC MCU 1.5K FLASH 8MHZ 20-DIP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MCR908JK1ECPE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Peripherals: LED, LVD, POR, PWM
• Number Of I /o: 14
• Program Memory Size: 1.5KB (1.5K x 8)
• Program Memory Type: FLASH
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.3 V
• Data Converters: A/D 12x8b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-DIP (0.300", 7.62mm)
• Processor Series: HC08JK
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 128 B
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 15
• Number Of Timers: 2
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• Development Tools By Supplier: FSICEBASE, DEMO908JL16E, M68CBL05CE
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8 bit, 12 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Connectivity: -
• Lead Free Status / Rohs Status: Details

A.5.6 Memory Characteristics
The Flash memory can only be read at an operating voltage of 2.2 to 5.5V. Program and erase are
achieved at an operating voltage of 2.7 to 5.5V. The program and erase parameters in
V
Freescale Semiconductor
RAM data retention voltage
Flash program bus clock frequency
Flash read bus clock frequency
Flash page erase time
Flash mass erase time
Flash PGM/ERASE to HVEN set up time
Flash high-voltage hold time
Flash high-voltage hold time (mass erase)
Flash program hold time
Flash program time
Flash return to read time
Flash cumulative program hv period
Flash row erase endurance
Flash row program endurance
Flash data retention time
DD
1. f
2. If the page erase time is longer than t
3. If the mass erase time is longer than t
4. t
5. t
6. The minimum row endurance value specifies each row of the Flash memory is guaranteed to work for at least this many
7. The minimum row endurance value specifies each row of the Flash memory is guaranteed to work for at least this many
8. The Flash is guaranteed to retain data over the entire operating temperature range for at least the minimum time specified.
ory.
memory.
HVEN to 0.
t
erase / program cycles.
erase / program cycles.
Read
rcv
HV
HV
= 2.7 to 5.5V only.
is defined as the time it needs before the Flash can be read after turning off the high voltage charge pump, by clearing
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is defined as the frequency range for which the Flash memory can be read.
(8)
(6)
Characteristic
(7)
nvs
+ t
MC68HC908JL3E Family Data Sheet, Rev. 4
Table A-6. Memory Characteristics
Erase
nvh
MErase
+ t
(Min), there is no erase-disturb, but it reduces the endurance of the Flash mem-
pgs
(Min), there is no erase-disturb, but it reduces the endurance of the Flash
+ (t
PROG
× 32) ≤ t
HV
max.
t
Symbol
MErase
t
f
Erase
Read
t
V
t
t
PROG
HV
t
rcv
t
t
t
nvhl
RDR
pgs
—
nvs
nvh
—
—
—
(4)
(5)
(1)
(2)
(3)
Min
32k
100
10k
10k
1.3
10
30
—
10
1
1
4
5
5
1
Table A-6
Max
8M
40
—
—
—
—
—
—
—
—
—
—
—
—
4
cycles
cycles
years
MHz
Unit
are for
ms
ms
ms
Hz
μs
μs
μs
μs
μs
μs
V
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