ST10F272B_12 STMICROELECTRONICS [STMicroelectronics], ST10F272B_12 Datasheet - Page 131

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ST10F272B_12

Manufacturer Part Number
ST10F272B_12
Description
16-bit MCU with 256 Kbyte Flash memory and 12/20 Kbyte RAM
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
ST10F272B/ST10F272E
24
24.1
Table 60.
Symbol
V
V
V
ESD
I
V
AGND
T
AREF
V
STBY
I
TOV
OV
DD
ST
IO
Voltage on V
Voltage on V
Voltage on V
Voltage on V
Voltage on any pin with respect to ground (V
Input current on any pin during overload condition
Absolute sum of all input currents during overload condition
Storage temperature
ESD Susceptibility (Human Body Model)
Electrical characteristics
Absolute maximum ratings
Stressing the device above the rating listed in
the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not
implied. Exposure to the conditions in
reliability. During overload conditions (V
to ground (V
During Power-on and Power-off transients (including Standby entering/exiting phases), the
relationships between voltages applied to the device and the main V
respected. In particular power-on and power-off of V
transient, in order to avoid undesired current injection through the on-chip protection diodes.
Absolute maximum ratings
AREF
AGND
DD
STBY
SS
pins with respect to ground (V
) must not exceed the values defined by the Absolute Maximum Ratings.
pin with respect to ground (V
pins with respect to ground (V
pins with respect to ground (V
Parameter
Doc ID 11917 Rev 3
Table 60
SS
IN
SS
> V
)
SS
SS
)
SS
)
DD
)
)
Table 60
or V
for extended periods may affect device
IN
< V
AREF
may cause permanent damage to
SS
) the voltage on pins with respect
shall be coherent with V
-0.5 to V
Electrical characteristics
-0.5 to +6.5
-0.5 to +6.5
-65 to +150
-0.3 to V
Values
DD
| 75 |
2000
± 10
V
SS
DD
shall be always
DD
+ 0.5
DD
131/188
Unit
mA
mA
°C
V
V
V
V
V
V

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