ST10F272B_12 STMICROELECTRONICS [STMicroelectronics], ST10F272B_12 Datasheet - Page 160

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ST10F272B_12

Manufacturer Part Number
ST10F272B_12
Description
16-bit MCU with 256 Kbyte Flash memory and 12/20 Kbyte RAM
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Electrical characteristics
24.8.12
160/188
Table 73.
The given values of C
printed circuit board: the negative resistance values are calculated assuming additional 5pF
to the values in the table. The crystal shunt capacitance (C
between XTAL1 and XTAL2 pins is globally assumed equal to 10pF.
The external resistance between XTAL1 and XTAL2 is not necessary, since already present
on the silicon.
32 kHz oscillator specifications
V
Table 74.
1. At power-on a high current biasing is applied for faster oscillation start-up. Once the oscillation is started,
2. Not 100% tested, guaranteed by design characterization.
4 MHz
8 MHz
Symbol
t
V
DD
STUP32
V
g
OSC32
AV32
the current biasing is reduced to lower the power consumption of the system.
m32
= 5V ± 10%, V
545 Ω
240 Ω
Oscillator Transconductance
Oscillation Amplitude
Oscillation Voltage level
Oscillator Start-up Time
min.
Main oscillator negative resistance (module)
32kHz oscillator characteristics
C
A
1035 Ω
Parameter
450 Ω
SS
typ.
= 15pF
A
= 0V, T
do not include the stray capacitance of the package and of the
max.
A
2)
Doc ID 11917 Rev 3
= –40 to +125°C
2)
2)
1)
550 Ω
170 Ω
min.
Start-up
Normal run
Peak to Peak
Sine wave middle
Stable V
Conditions
C
A
1050 Ω
DD
350 Ω
typ.
= 25pF
max.
0
min.
) and the package capacitance
0.5
0.7
20
8
430 Ω
120 Ω
min.
ST10F272B/ST10F272E
Value
typ.
1.0
0.9
31
17
1
C
A
850 Ω
250 Ω
typ.
= 35pF
max.
2.4
1.2
50
30
5
max.
μA/V
μA/V
Unit
V
V
s

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