MT29F8G08BAAWP:A TR Micron Technology Inc, MT29F8G08BAAWP:A TR Datasheet - Page 13

• Manufacturer Part Number: MT29F8G08BAAWP:A TR
• Description: IC FLASH 8GBIT 48TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08BAAWP:A TR

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 8G (1G x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Array Organization
Figure 6:
Cache Register
Table 3:
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
Cycle
First
Second
Third
Fourth
Fifth
Data Register
2,048 blocks
4,096 blocks
per device
per plane
Array Addressing: MT29F4G08AAA and MT29F8G08DAA
Array Organization for MT29F4G08AAA and MT29F8G08DAA (x8)
(0, 2, 4, 6, ..., 4,092, 4,094)
even-numbered blocks
BA15
LOW
LOW
I/O7
CA7
BA7
Notes:
Notes:
Plane of
2,048
2,048
1 block
1. For the 8Gb MT29F8G08DAA, the 4Gb array organization shown applies to each chip enable
1. Block address concatenated with page address = actual page address. CAx = column
2. If CA11 is “1,” then CA[10:6] must be “0.”
BA14
(CE# and CE2#).
LOW
LOW
address; PAx = page address; BAx = block address.
I/O6
CA6
BA6
2,112 bytes
64
64
(1, 3, 5, 7, ..., 4,093, 4,095)
BA13
LOW
LOW
I/O5
CA5
PA5
odd-numbered blocks
2,048
2,048
1 block
Plane of
2,112 bytes
BA12
LOW
LOW
I/O4
CA4
PA4
13
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
64
64
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CA11
BA11
LOW
I/O3
CA3
PA3
1 page
1 block
1 plane
1 device = 2,112Mb x 2 planes
I/O0
I/O7
= (2K + 64 bytes)
= (2K + 64) bytes x 64 pages
= (128K + 4K) bytes
= (128K + 4K) bytes x 2,048 blocks
= 2,112Mb
= 4,224Mb
CA10
BA10
LOW
I/O2
CA2
PA2
©2006 Micron Technology, Inc. All rights reserved.
Array Organization
BA17
I/O1
CA1
CA9
BA9
PA1
BA16
I/O0
CA0
CA8
BA8
PA0