MT29F8G08BAAWP:A TR Micron Technology Inc, MT29F8G08BAAWP:A TR Datasheet - Page 35

IC FLASH 8GBIT 48TSOP

MT29F8G08BAAWP:A TR

Manufacturer Part Number
MT29F8G08BAAWP:A TR
Description
IC FLASH 8GBIT 48TSOP
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F8G08BAAWP:A TR

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
8G (1G x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Figure 25:
TWO-PLANE Operations
Two-Plane Addressing
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
WE#
R/B#
I/Ox
ALE
CLE
CE#
RE#
OTP DATA READ Operation
AFh
Notes:
add 1
Col
R/B# goes LOW (
READ STATUS (70h) command and the RESET (FFh) command are the only commands
valid during the OTP DATA READ operation. Bit 5 of the status register will reflect the
state of R/B#. For details, refer to Table 9 on page 26.
Normal READ operation timings apply to OTP read accesses (see Figure 25). Additional
pages within the OTP area can be selected by repeating the OTP DATA READ command.
1. The OTP page must be within the 02h–0Bh range.
This NAND Flash device is divided into two physical planes. Each plane contains a
2,112-byte data register, a 2,112-byte cache register, and a 2,048-block NAND Flash
array. Two-plane commands make better use of the Flash arrays on these physical
planes by performing PROGRAM, READ, or ERASE operations simultaneously, signifi-
cantly improving system performance.
Two-plane commands require two addresses, one address per plane. These two
addresses are subject to the following requirements:
• The least significant block address bit, BA6, must be different for the two addresses.
• The most significant block address bit, BA18 for 16Gb devices and for 8Gb devices
• The page address bits, PA[5:0], must be identical for both addresses.
with 1 CE#, must be identical for each plane.
add 2
Col
page
OTP
1
t
R) while the data is moved from the OTP page to the data register. The
00h
00h
35
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
30h
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Busy
t R
D
OUT
N
Command Definitions
D
N + 1
OUT
©2006 Micron Technology, Inc. All rights reserved.
Don’t Care
D
OUT
M

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