IC PIC MCU FLASH 16K 28-SSOP

PIC24F16KA102-I/SS

Manufacturer Part NumberPIC24F16KA102-I/SS
DescriptionIC PIC MCU FLASH 16K 28-SSOP
ManufacturerMicrochip Technology
SeriesPIC® XLP™ 24F
PIC24F16KA102-I/SS datasheets
 


Specifications of PIC24F16KA102-I/SS

Program Memory TypeFLASHProgram Memory Size16KB (5.5K x 24)
Package / Case28-SSOPCore ProcessorPIC
Core Size16-BitSpeed32MHz
ConnectivityI²C, IrDA, SPI, UART/USARTPeripheralsBrown-out Detect/Reset, POR, PWM, WDT
Number Of I /o24Eeprom Size512 x 8
Ram Size1.5K x 8Voltage - Supply (vcc/vdd)1.8 V ~ 3.6 V
Data ConvertersA/D 9x10bOscillator TypeInternal
Operating Temperature-40°C ~ 85°CProcessor SeriesPIC24F
CorePICData Bus Width16 bit
Data Ram Size1.5 KBInterface TypeI2C/IrDA/SPI/UART
Maximum Clock Frequency32 MHzNumber Of Programmable I/os24
Number Of Timers3Operating Supply Voltage1.8 V to 3.6 V
Maximum Operating Temperature+ 85 CMounting StyleSMD/SMT
3rd Party Development Tools52713-733, 52714-737, 53276-922, EWDSPICDevelopment Tools By SupplierPG164130, DV164035, DV244005, DV164005, DM240001
Minimum Operating Temperature- 40 COn-chip Adc9-ch x 10-bit
Lead Free Status / RoHS StatusLead free / RoHS CompliantFor Use WithMA240017 - MODULE PLUG-IN PIC24F16KA102 PIM
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Page 57/254

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6.4.1.1
Data EEPROM Bulk Erase
To erase the entire data EEPROM (bulk erase), the
address registers do not need to be configured
because this operation affects the entire data
EEPROM. The following sequence helps in performing
bulk erase:
1.
Configure NVMCON to Bulk Erase mode.
2.
Clear NVMIF status bit and enable NVM
interrupt (optional).
3.
Write the key sequence to NVMKEY.
4.
Set the WR bit to begin erase cycle.
5.
Either poll the WR bit or wait for the NVM
interrupt (NVMIF set).
A typical bulk erase sequence is provided in
Example 6-3.
EXAMPLE 6-3:
DATA EEPROM BULK ERASE
// Set up NVMCON to bulk erase the data EEPROM
NVMCON = 0x4050;
// Disable Interrupts For 5 Instructions
asm volatile (“disi #5”);
// Issue Unlock Sequence and Start Erase Cycle
__builtin_write_NVM();
EXAMPLE 6-4:
SINGLE-WORD WRITE TO DATA EEPROM
int __attribute__ ((space(eedata))) eeData = 0x1234;
int newData;
unsigned int offset;
// Set up NVMCON to erase one word of data EEPROM
NVMCON = 0x4004;
// Set up a pointer to the EEPROM location to be erased
TBLPAG = __builtin_tblpage(&eeData);
offset = __builtin_tbloffset(&eeData);
__builtin_tblwtl(offset, newData);
asm volatile ("disi #5");
__builtin_write_NVM();
© 2009 Microchip Technology Inc.
PIC24F16KA102 FAMILY
6.4.2
SINGLE-WORD WRITE
To write a single word in the data EEPROM, the
following sequence must be followed:
1.
Erase one data EEPROM word (as mentioned in
the
previous
section)
(NVMCON<12>) is set to ‘1’.
2.
Write the data word into the data EEPROM
latch.
3.
Program the data word into the EEPROM:
- Configure the NVMCON register to program one
EEPROM word (NVMCON<5:0> = 0001xx).
- Clear NVMIF status bit and enable NVM
interrupt (optional).
- Write the key sequence to NVMKEY.
- Set the WR bit to begin erase cycle.
- Either poll the WR bit or wait for the NVM
interrupt (NVMIF set).
- To get cleared, wait until NVMIF is set.
A typical single-word write sequence is provided in
Example 6-4.
// Variable located in EEPROM
// New data to write to EEPROM
// Initialize EE Data page pointer
// Initizlize lower word of address
// Write EEPROM data to write latch
// Disable Interrupts For 5 Instructions
// Issue Unlock Sequence & Start Write Cycle
Preliminary
if
PGMONLY
bit
DS39927B-page 55