R8A77850BDBGV#RD0Z Renesas Electronics America, R8A77850BDBGV#RD0Z Datasheet - Page 1405

IC SUPERH MPU ROMLESS 436BGA

R8A77850BDBGV#RD0Z

Manufacturer Part Number
R8A77850BDBGV#RD0Z
Description
IC SUPERH MPU ROMLESS 436BGA
Manufacturer
Renesas Electronics America
Series
SuperH® SH7780r
Datasheet

Specifications of R8A77850BDBGV#RD0Z

Core Processor
SH-4A
Core Size
32-Bit
Speed
600MHz
Connectivity
Audio Codec, MMC, Serial Sound, SCI, SIO, SPI, SSI
Peripherals
DMA, POR, WDT
Number Of I /o
108
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
1 V ~ 1.2 V
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
436-BGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Data Converters
-

Available stocks

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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
R8A77850BDBGV#RD0Z
Manufacturer:
Renesas Electronics America
Quantity:
10 000
27.5
The examples of setting and starting registers in each access mode are shown below.
Example of Register Setting
Figure 27.11 NAND Command Access (Block Erase)
Common control register (FLCMNCR)
ACM[1:0] = B'00 (command access mode)
CE0 = B'1 (enable the chip)
TYPESEL = B'1 (select NAND-type flash memory)
Command control register (FLCMDCR)
DOCMD1 = B'1 (execute first command stage)
DOCMD2 = B'1 (execute second command stage)
DOADR = B'1 (execute address stage)
ADRMD = B'1 (address register value is output as
memory address)
ADRCNT[1:0] = B'01 (issue 2-byte address)
DOSR = B'1 (perform status read)
Command code register (FLCMCDR)
CMD[7:0] = H'60 (block erase command)
CMD[15:8] = H'D0 (block erase execute command)
Address register (FLADR)
Set erase addresses to ADR[7:0] and ADR[15:8]
Transfer control register (FLTRCR)
TRSTRT = B'1 (start flash memory access)
Perform block erase of flash memory
Issue first command
Issue address
Issue second command
Read status
Set TRSTRT = B'1 (start flash memory access)
End of flash memory access
FLTRCR.TREND = B'0 (clear processing end flag)
Read status
Check FLBSYCNT.STAT[7:0]
End of command access (block erase)
Start of command access (block erase)
FLTRCR.TREND = B'1?
Yes
27. NAND Flash Memory Controller (FLCTL)
Rev.1.00 Jan. 10, 2008 Page 1373 of 1658
No
REJ09B0261-0100

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