MT41J64M16JT-15E AIT:G Micron, MT41J64M16JT-15E AIT:G Datasheet - Page 40

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MT41J64M16JT-15E AIT:G

Manufacturer Part Number
MT41J64M16JT-15E AIT:G
Description
DRAM Chip DDR3 SDRAM 1G-Bit 64Mx16 1.5V 96-Pin FBGA
Manufacturer
Micron
Datasheet
AC Overshoot/Undershoot Specification
Table 21: Control and Address Pins
Table 22: Clock, Data, Strobe, and Mask Pins
Figure 11: Overshoot
Figure 12: Undershoot
PDF: 09005aef84491df3
1Gb_AIT_AAT_DDR3_SDRAM.pdf – Rev. C 8/11 EN
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 11)
Maximum peak amplitude allowed for undershoot
area
(see Figure 12)
Maximum overshoot area above V
Maximum undershoot area below V
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 11)
Maximum peak amplitude allowed for undershoot
area
(see Figure 12)
Maximum overshoot area above V
ure 11)
Maximum undershoot area below V
ure 12)
Volts (V)
Volts (V)
V
DD
V
DD
DD
/V
SS
SS
SS
/V
DDQ
/V
(see Figure 11)
/V
(see Figure 12)
DDQ
SSQ
SSQ
(see Fig-
(see Fig-
Maximum amplitude
DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866
DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866
Maximum amplitude
0.67 Vns
0.67 Vns
0.25 Vns
0.25 Vns
0.4V
0.4V
0.4V
0.4V
40
1Gb: x8, x16 Automotive DDR3 SDRAM
Time (ns)
Time (ns)
Electrical Specifications – DC and AC
Micron Technology, Inc. reserves the right to change products or specifications without notice.
0.19 Vns
0.19 Vns
0.5 Vns
0.5 Vns
0.4V
0.4V
0.4V
0.4V
Undershoot area
Overshoot area
0.15 Vns
0.15 Vns
0.4 Vns
0.4 Vns
0.4V
0.4V
0.4V
0.4V
‹ 2010 Micron Technology, Inc. All rights reserved.
0.33 Vns
0.33 Vns
0.13 Vns
0.13 Vns
0.4V
0.4V
0.4V
0.4V
0.28 Vns
0.28 Vns
0.11 Vns
0.11 Vns
0.4V
0.4V
0.4V
0.4V

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