MC68HC705B16CFN Freescale Semiconductor, MC68HC705B16CFN Datasheet - Page 260
Manufacturer Part Number
IC MCU 2.1MHZ 15K OTP 52-PLCC
Specifications of MC68HC705B16CFN
Number Of I /o
Program Memory Size
15KB (15K x 8)
Program Memory Type
256 x 8
352 x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
-40°C ~ 85°C
Package / Case
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Bonase Electronics (HK) Co., Limited
E1LAT — EEPROM programming latch enable bit
STOP, power-on and external reset clear the E1LAT bit.
E1PGM — EEPROM charge pump enable/disable
When the charge pump generator is on, the resulting high voltage is applied to the EEPROM array.
This bit cannot be set before the data is selected, and once this bit has been set it can only be
cleared by clearing the E1LAT bit.
A summary of the effects of setting/clearing bits 0, 1 and 2 of the control register are given in
0 (clear) –
0 (clear) –
After the t
to zero in order to clear the E1ERA bit and the E1PGM bit.
The E1PGM and E1ERA bits are cleared when the E1LAT bit is at zero.
E1ERA E1LAT E1PGM
Address and data can be latched into the EEPROM for further
program or erase operations, providing the E1PGM bit is cleared.
Data can be read from the EEPROM. The E1ERA bit and the E1PGM
bit are reset to zero when E1LAT is ‘0’.
Internal charge pump generator switched on.
Internal charge pump generator switched off.
Table H-3 EEPROM control bits description
erase time or t
Ready to load address/data for program/erase
Byte programming in progress
Ready for byte erase (load address)
Byte erase in progress
programming time, the E1LAT bit has to be reset