n25q064 Numonyx, n25q064 Datasheet - Page 142

• Manufacturer Part Number: n25q064
• Description: 64mb 1.8v, Multiple I/o, 4kb Subsector Erase, Xip Enabled, Serial Flash Memory With 108 Mhz Spi Bus Interface
• Manufacturer: Numonyx

DC and AC parameters
Table 31.
1. tCH + tCL must be greater than or equal to 1/ fC.
2. Typical values given for TA = 25 °C
3. Value guaranteed by characterization, not 100% tested in production.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for a WRSR instruction when SRWD is set to '1'.
6. VPPH should be kept at a valid level until the program or erase operation has completed and its result (success or failure)
7. When using the page program (PP) instruction to program consecutive bytes, optimized timings are obtained with one
8. int(A) corresponds to the upper integer part of A. For example int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
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tWNVCR
tWVCR
tWRVECR
tPP
tSSE
tSE
tBE
tDP
tRDP
Symbol
is known.
sequence including all the bytes versus several sequences of only a few bytes (1 < n < 256).
(7)
AC Characteristics (page 2 of 2)
Figure 110. Reset AC waveforms while a program or erase cycle is in progress
Reset
S
Alt.
Write non volatile configuration register
cycle time
Write volatile configuration register cycle
time
Write volatile enhanced
configurationregister cycle time
Page Program Cycle Time (256 Bytes)
Page Program Cycle Time (n Bytes)
Page Program Cycle Time Vpp=VPPH (256
Bytes)
Program OTP cycle time (64 bytes)
Subsector erase cycle time
Sector Erase Cycle Time
Sector Erase Cycle Time Vpp=VPPH
Bulk erase cycle time
Bulk erase cycle time (with VPP=VPPH)
S to Deep Power-Down
S High to Standby mode
Parameter
tSHRH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
tRLRH
Min
tRHSL
0.2
40
40
0.5
0.015
0.4
0.2
0.3
0.7
0.6
60
50
int(n/8) ×
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Typ
(8)
(2)
3
5
5
5
3
3
3
120
120
3
30
N25Q064 - 1.8V
Max
Unit
ms
ms
µA
µA
ns
ns
s
s
s
s
s