ST7LIT10BF1 STMicroelectronics, ST7LIT10BF1 Datasheet - Page 127

• Manufacturer Part Number: ST7LIT10BF1
• Description: 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, 5 TIMERS, SPI
• Manufacturer: STMicroelectronics

Specifications of ST7LIT10BF1

• Up To 4 Kbytes Single Voltage Extended Flash (xflash) Program Memory With Read-out Protection, In-circuit Programming And In-application Programming (icp And Iap). 10k Write/erase Cycles Guaranteed, Data Retention: 20 years at 55˚C.
• 128 Bytes Data Eeprom With Read-out Protection. 300k Write/erase Cycles Guaranteed, Data Retention: 20 years at 55˚C.
• Clock Sources: Internal 1% RC oscillator (on ST7FLITE15B and ST7FLITE19B), crystal/ceramic resonator or external clock
• Five Power Saving Modes: Halt, Active-Halt, Auto Wake-up from Halt, Wait and Slow

13.7 EMC CHARACTERISTICS
Susceptibility tests are performed on a sample ba-
sis during product characterization.
13.7.1 Functional EMS (Electro Magnetic
Susceptibility)
Based on a simple running application on the
product (toggling 2 LEDs through I/O ports), the
product is stressed by two electro magnetic events
until a failure occurs (indicated by the LEDs).
■
■
A device reset allows normal operations to be re-
sumed. The test results are given in the table be-
low based on the EMS levels and classes defined
in application note AN1709.
13.7.1.1 Designing hardened software to avoid
noise problems
EMC characterization and optimization are per-
formed at component level with a typical applica-
13.7.2 Electro Magnetic Interference (EMI)
Based on a simple application running on the
product (toggling 2 LEDs through the I/O ports),
the product is monitored in terms of emission. This
emission test is in line with the norm SAE J 1752/
3 which specifies the board and the loading of
each pin.
Note:
1. Data based on characterization results, not tested in production.
Symbol
Symbol
ESD: Electro-Static Discharge (positive and
negative) is applied on all pins of the device until
a functional disturbance occurs. This test
conforms with the IEC 1000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive
and negative) is applied to V
a 100pF capacitor, until a functional disturbance
occurs. This test conforms with the IEC 1000-4-
4 standard.
V
V
S
FESD
FFTB
EMI
Voltage limits to be applied on any I/O pin to induce a
functional disturbance
Fast transient voltage burst limits to be applied
through 100pF on V
tional disturbance
Peak level
Parameter
DD
Parameter
DD
and V
V
SO20 package,
conforming to SAE J 1752/3
and V
DD
SS
=5V, T
pins to induce a func-
SS
Conditions
through
A
=+25°C,
tion environment and simplified MCU software. It
should be noted that good EMC performance is
highly dependent on the user application and the
software in particular.
Therefore it is recommended that the user applies
EMC software optimization and prequalification
tests in relation with the EMC level requested for
his application.
Software recommendations:
The software flowchart must include the manage-
ment of runaway conditions such as:
– Corrupted program counter
– Unexpected reset
– Critical Data corruption (control registers...)
Prequalification trials:
Most of the common failures (unexpected reset
and program counter corruption) can be repro-
duced by manually forcing a low state on the RE-
SET pin or the Oscillator pins for 1 second.
To complete these trials, ESD stress can be ap-
plied directly on the device, over the range of
specification values. When unexpected behaviour
is detected, the software can be hardened to pre-
vent unrecoverable errors occurring (see applica-
tion note AN1015).
0.1MHz to 30MHz
30MHz to 130MHz
130MHz to 1GHz
SAE EMI Level
V
conforms to IEC 1000-4-2
V
conforms to IEC 1000-4-4
Frequency Band
DD
DD
=5V, T
=5V, T
Monitored
A
A
=+25°C, f
=+25°C, f
Conditions
OSC
OSC
Max vs. [f
8/4MHz
3.5
15
22
17
=8MHz
=8MHz
OSC
16/8MHz
ST7LITE1xB
3.5
/f
21
29
22
CPU
]
127/159
Level/
Class
dBμV
Unit
2B
3B
-