HYB39S256400T-10 SIEMENS [Siemens Semiconductor Group], HYB39S256400T-10 Datasheet - Page 10

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HYB39S256400T-10

Manufacturer Part Number
HYB39S256400T-10
Description
256 MBit Synchronous DRAM
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
Address Input for Mode Set (Mode Register Operation)
Semiconductor Group
Address Input for Mode Set (Mode Register Operation)
Operation Mode
CAS Latency
BA1 BA0 A12 A11 A10 A9
BA1
M6 M5 M4
0
0
0
0
0
0
1
1
1
1
burst read /
burst read /
single write
0
0
0
0
1
1
1
1
burst write
Mode
0
0
0
0
1
1
1
1
Operation Mode
Reserved
Reserved
Reserved
Latency
2
3
4
A8
A7
A6
CAS Latency
10
A5
Burst Length
M2
0
0
0
0
1
1
1
1
A4
M1
0
0
0
0
1
1
1
1
Burst Type
M3
BT
A3
0
1
256 MBit Synchronous DRAM
M0
0
0
0
0
1
1
1
1
A2
Burst Length
Sequential
Interleave
Sequential
HYB 39S256400/800/160T
Reserved
Type
A1 A0
1
2
4
8
Length
Address Bus (Ax)
Mode Register (Mx)
Interleave
Reserved
2
4
8
1
SPB03941
1998-10-01

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