HYB39S256400T-10 SIEMENS [Siemens Semiconductor Group], HYB39S256400T-10 Datasheet - Page 55

• Manufacturer Part Number: HYB39S256400T-10
• Description: 256 MBit Synchronous DRAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

21.2. CAS Latency = 3
Semiconductor Group
CLK
CKE
CS
RAS
CAS
WE
BS
AP
Addr.
DQM
DQ
High
Hi
Command
Activate
Bank A
Z
RAx
RAx
T0
t
T1
CK3
Command
T2
Bank A
Write
DAx DAx+1
CAx
T3
page address back to zero
The burst counter wraps
during this time interval.
from the highest order
Command
Command
T4
Activate
Activate
Bank B
Bank B
DAx 2
RBx
RBx
+
T5
DAx
3 +
T6
DAx
-1
T7
DAx
T8
DAx 1 +
Command
T9 T10 T11 T12
terminate when the burst length is satisfied;
bursting beginning with the starting address.
the burst counter increments and continues
Bank B
Write
DBx
CBx
Full Page burst operation does not
55
DBx
1 +
DBx
2 + DBx
+
256 MBit Synchronous DRAM
ignored.
Data is
T13
3
DBx
+
T14
4
DBx+5
HYB 39S256400/800/160T
Burst Stop
Command
T15
Burst Length = Full Page, CAS Latency = 3
T16 T17
Precharge
Command
Bank B
T18
T19
Command
Activate
Bank B
RBy
RBy
T20
1998-10-01
T21 T22
SPT03932