HYB39S256400T-10 SIEMENS [Siemens Semiconductor Group], HYB39S256400T-10 Datasheet - Page 48

• Manufacturer Part Number: HYB39S256400T-10
• Description: 256 MBit Synchronous DRAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

18. Random Row Read (Interleaving Banks) with Precharge
18.1. CAS Latency = 2
Semiconductor Group
CLK
CKE
CS
RAS
CAS
WE
BS
AP
Addr.
DQM
DQ
High
Hi-Z
Command
Activate
Bank B
RBx
RBx
T0
t
RCD
t
Command
CK2
T1
Bank B
Read
CBx
T2
t
T3
AC2
Bx0
T4
Bx1
T5
Bx2
T6
Bx3 Bx4
Command
T7
Activate
Bank A
RAx
RAx
T8
Bx5
Command
T9 T10
Bank A
Read
Bx6
CAx
48
Precharge
Command
Bank B
Bx7 Ax0 Ax1
T11
T12 T13
Command
Activate
Bank B
RBy
RBy
256 MBit Synchronous DRAM
t
RP
Ax2
T14
HYB 39S256400/800/160T
Ax3 Ax4
T15
T16
Ax5
T17 T18
Burst Length = 8, CAS Latency = 2
Ax6 Ax7
Command
Bank B
Read
CBy
T19
T20 T21 T22
By0
1998-10-01
SPT03925
By1