HYB39S256400T-10 SIEMENS [Siemens Semiconductor Group], HYB39S256400T-10 Datasheet - Page 22

• Manufacturer Part Number: HYB39S256400T-10
• Description: 256 MBit Synchronous DRAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

Timing Diagrams
1
2
3
4
4.1
4.2
4.3
5
6
6.1
6.2
7
7.1
7.2
8
8.1
8.2
9
9.1
9.2
10
11
12
12.1
12.2
12.3
12.4
13
14
15
16
16.1
16.2
Semiconductor Group
Bank Activate Command Cycle
Burst Read Operation
Read Interrupted by a Read
Read to Write Interval
Read to Write Interval
Minimum Read to Write Interval
Non-Minimum Read to Write Interval
Burst Write Operation
Write and Read Interrupt
Write Interrupted by a Write
Write Interrupted by a Read
Burst Write and Read with Auto Precharge
Burst Write with Auto Precharge
Burst Read with Auto Precharge
Burst Termination
Termination of a full Page Burst Read Operation
Termination of a full Page Burst Write Operation
AC Parameters
AC Parameters for a Write Timing
AC Parameters for a Read Timing
Mode Register Set
Power on Sequence and Auto Refresh (CBR)
Clock Suspension (Using CKE)
Clock Suspension During Burst Read CAS Latency = 2
Clock Suspension During Burst Read CAS Latency = 3
Clock Suspension During Burst Write CAS Latency = 2
Clock Suspension During Burst Write CAS Latency = 3
Power Down Mode and Clock Suspend
Self Refresh (Entry and Exit)
Auto Refresh (CBR)
Random Column Read (Page within same Bank)
CAS Latency = 2
CAS Latency = 3
22
256 MBit Synchronous DRAM
HYB 39S256400/800/160T
1998-10-01