HYB39S256400T-10 SIEMENS [Siemens Semiconductor Group], HYB39S256400T-10 Datasheet - Page 18

• Manufacturer Part Number: HYB39S256400T-10
• Description: 256 MBit Synchronous DRAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

AC Characteristics
T
Parameter
Refresh Cycle
Refresh Period
(8192 cycles)
Self Refresh Exit time
Read Cycle
Data Out Hold time
Data Out to Low Impedance
time
Data Out to High Impedance
time
DQM Data Out Disable
latency
Write Cycle
Data Input to Precharge
DQM Write Mask Latency
Semiconductor Group
A
= 0 to 70 C;
V
SS
= 0 V;
1, 2, 3
(cont’d)
V
DD
= 3.3 V
Symb.
t
t
t
t
t
t
t
t
REF
SREX
OH
LZ
HZ
DQZ
WR
DQW
min. max. min. max. min. max.
–
10
3
0
3
–
2
0
0.3 V,
-8
t
18
64
–
–
–
8
2
–
–
T
= 1 ns
Limit Values
–
10
3
0
3
–
2
0
256 MBit Synchronous DRAM
-8B
64
–
–
–
10
2
–
–
HYB 39S256400/800/160T
–
10
3
0
3
–
2
0
-10
64
–
–
–
10
2
–
–
Unit Note
ms
ns
ns
ns
ns
CLK
CLK
CLK
1998-10-01
2
8