HYB39S256400T-10 SIEMENS [Siemens Semiconductor Group], HYB39S256400T-10 Datasheet - Page 34

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HYB39S256400T-10

Manufacturer Part Number
HYB39S256400T-10
Description
256 MBit Synchronous DRAM
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
9.2. AC Parameters for a Read Timing
Semiconductor Group
CLK
CKE
CS
RAS
CAS
WE
BS
AP
Addr.
DQM
DQ
t
CKS
Hi-Z
t
CH
T0
t
CL
t
t
AS
CS
T1
Command
Activate
Bank A
RAx
RAx
t
T2
CK2
t
t
CH
AH
t
RCD
Auto Precharge
T3
Command
Read with
Bank A
t
CAx
RRD
T4
t
t
LZ
AC2
T5
y
t
Command
OH
Activate
Bank B
RBx
RBx
Ax0
34
t
Begin Auto
Precharge
Bank A
AC2
t
T6
RAS
Ax1
t
Auto Precharge
t
HZ
T7
RC
Read with
Command
Bank B
256 MBit Synchronous DRAM
RBx
T8
HYB 39S256400/800/160T
T9
Precharge
Command
Bank A
Bx0
Begin Auto
Precharge
Bank B
Burst Length = 2, CAS Latency = 2
T10
t
RP
Bx1
t
CKH
t
T11
HZ
Command
Activate
Bank A
RAy
RAy
T12
1998-10-01
SPT03911
T13

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