HD64F7144F50V Renesas Electronics America, HD64F7144F50V Datasheet - Page 722

• Manufacturer Part Number: HD64F7144F50V
• Description: IC SUPERH MCU FLASH 256K 112QFP
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7144r

Specifications of HD64F7144F50V

• Core Processor: SH-2
• Core Size: 32-Bit
• Speed: 50MHz
• Connectivity: EBI/EMI, I²C, SCI
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 112-QFP
• For Use With: HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)EDK7145 - DEV EVALUATION KIT SH7145
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

19. Flash Memory (F-ZTAT Version)
19.8
A software method using the CPU is employed to program and erase the flash memory in on-
board programming modes. Depending on the FLMCR1 and FLMCR2 settings, the flash memory
operates in one of the following four modes: Program mode, program-verify mode, erase mode,
and erase-verify mode. The programming control program in boot mode and the user
program/erase control program in user program mode use these operating modes in combination to
perform programming/erasing. Flash memory programming and erasing should be performed in
accordance with the descriptions in section 19.8.1, Program/Program-Verify Mode and section
19.8.2, Erase/Erase-Verify Mode, respectively.
19.8.1
When writing data or programs to the flash memory, the program/program-verify flowchart shown
in figure 19.9 should be followed. Performing programming operations according to this flowchart
will enable data or programs to be written to the flash memory without subjecting the chip to
voltage stress or sacrificing program data reliability.
1. Programming must be done to an empty address. Do not reprogram an address to which
2. Programming should be carried out 128 bytes at a time. A 128-byte data transfer must be
3. Prepare the following data storage areas in RAM: A 128-byte programming data area, a 128-
4. Consecutively transfer 128 bytes of data in byte units from the reprogramming data area or
5. The time during which the P bit is set to 1 is the programming time. Figure 19.9 shows the
6. The watchdog timer (WDT) is set to prevent overprogramming due to program runaway, etc.
7. For a dummy write to a verify address, write 1-byte data H'FF to an address to be read. Verify
8. The number of repetitions of the program/program-verify sequence to the same bit should not
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REJ09B0108-0400
programming has already been performed.
performed even if writing fewer than 128 bytes. In this case, H'FF data must be written to the
extra addresses.
byte reprogramming data area, and a 128-byte additional-programming data area. Perform
reprogramming data computation and additional programming data computation according to
figure 19.9.
additional-programming data area to the flash memory. The program address and 128-byte
data are latched in the flash memory. The lower 8 bits of the start address in the flash memory
destination area must be H'00 or H'80.
allowable programming time.
An overflow cycle of approximately 6.6 ms is allowed.
data can be read in longwords from the address to which a dummy write was performed.
exceed the maximum number of programming (N).
Flash Memory Programming/Erasing
Program/Program-Verify Mode