MT41J256M8HX-15E:D Micron Technology Inc, MT41J256M8HX-15E:D Datasheet - Page 179

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MT41J256M8HX-15E:D

Manufacturer Part Number
MT41J256M8HX-15E:D
Description
MICMT41J256M8HX-15E:D 2GB:X4,X8,X16 DDR3
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Series
-r
Datasheets

Specifications of MT41J256M8HX-15E:D

Organization
256Mx8
Address Bus
18b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
165mA
Pin Count
78
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
2G (256M x 8)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
78-TFBGA
Lead Free Status / RoHS Status
Compliant

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Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse)
PDF: 09005aef826aaadc/Source: 09005aef82a357c3
DDR3_D5.fm - Rev G 2/09 EN
If the time in the precharge power down or idle states is very short (short CKE LOW
pulse), the power-down entry and power-down exit transition periods will overlap.
When overlap occurs, the response of the DRAM’s R
be synchronous or asynchronous from the start of the power-down entry transition
period to the end of the power-down exit transition period even if the entry period ends
later than the exit period (see Figure 119 on page 180).
If the time in the idle state is very short (short CKE HIGH pulse), the power-down exit
and power-down entry transition periods overlap. When this overlap occurs, the
response of the DRAM’s R
chronous from the start of power-down exit transition period to the end of the power-
down entry transition period (see Figure 119 on page 180).
TT
to a change in the ODT state may be synchronous or asyn-
179
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2Gb: x4, x8, x16 DDR3 SDRAM
TT
to a change in the ODT state may
On-Die Termination (ODT)
©2006 Micron Technology, Inc. All rights reserved.

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