MT41J256M8HX-15E:D Micron Technology Inc, MT41J256M8HX-15E:D Datasheet - Page 39

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MT41J256M8HX-15E:D

Manufacturer Part Number
MT41J256M8HX-15E:D
Description
MICMT41J256M8HX-15E:D 2GB:X4,X8,X16 DDR3
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Series
-r
Datasheets

Specifications of MT41J256M8HX-15E:D

Organization
256Mx8
Address Bus
18b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
165mA
Pin Count
78
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
2G (256M x 8)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
78-TFBGA
Lead Free Status / RoHS Status
Compliant

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Electrical Characteristics – I
Table 20:
PDF: 09005aef826aaadc/Source: 09005aef82a357c3
DDR3_D2.fm - Rev G 2/09 EN
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
0
1
2P0 (slow)
2P1 (fast)
2Q
2N
2NT
3P
3N
4R
4W
5B
6
6ET
7
8
Speed Bin
I
DD
Width
x4, x8
x4, x8
x16
x16
x16
x16
x16
x16
x16
All
All
All
All
All
All
All
All
All
x4
x8
x4
x4
x8
x4
x8
x4
x8
x8
Maximum Limits - Die Rev A
Notes:
I
DD
DDR3-800
I
noted.
1. T
2. Enabling ASR could increase I
3. Restricted to T
4. T
5. The I
DD
2P + 2mA
5b. When T
5a. When T
100
100
115
175
195
225
260
275
320
400
n/a
n/a
n/a
n/a
n/a
n/a
the range 0°C ≤ T
75
12
30
55
60
75
85
50
70
12
9
values are for full operating range of voltage and temperature unless otherwise
C
C
= 85°C; SRT and ASR are disabled.
= 85°C; ASR and ODT are disabled; SRT is enabled.
ated by 2%; and I
must be derated by 2%; I
80%.
DD
values must be derated (increased) on IT-option devices when operated outside of
C
C
> 85°C: I
< 0°C: I
I
C
DDR3-1066
DD
DD
(MAX) = 85°C.
2P + 2mA
C
120
115
135
105
200
225
255
295
290
345
430
n/a
n/a
n/a
n/a
n/a
n/a
≤ 85°C:
90
12
35
65
70
90
55
80
12
9
DD
Specifications
DD
DD
2P and I
0, I
6 and I
DD
39
1, I
DD
Electrical Characteristics – I
DD
DD
DD
2Px must be derated by 30%; and I
DD
x by up to an additional 2mA.
3P must be derated by 4%; I
7 must be derated by 7%
I
DDR3-1333
DD
2N, I
2P + 2mA
100
130
130
155
100
115
230
255
285
330
305
415
460
n/a
n/a
n/a
n/a
n/a
n/a
12
40
75
80
65
95
12
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
9
2NT, I
DD
2Q, I
2Gb: x4, x8, x16 DDR3 SDRAM
I
DDR3-1600
DD
DD
2P + 2mA
3N, I
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
n/a
n/a
n/a
n/a
n/a
n/a
DD
DD
3P, I
4R and I
©2006 Micron Technology, Inc. All rights reserved.
DD
DD
DD
6 must be derated by
4R, I
Units
DD
Specifications
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
DD
5W must be der-
4W, and I
Notes
1, 2, 3
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
2, 4
1, 2
1, 2
1, 2
1, 2
DD
5W

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