MT41J256M8HX-15E:D Micron Technology Inc, MT41J256M8HX-15E:D Datasheet - Page 60

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MT41J256M8HX-15E:D

Manufacturer Part Number
MT41J256M8HX-15E:D
Description
MICMT41J256M8HX-15E:D 2GB:X4,X8,X16 DDR3
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Series
-r
Datasheets

Specifications of MT41J256M8HX-15E:D

Organization
256Mx8
Address Bus
18b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
165mA
Pin Count
78
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
2G (256M x 8)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
78-TFBGA
Lead Free Status / RoHS Status
Compliant

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Table 44:
Alternative 40 Ohm Driver
Table 45:
40 Ohm Driver Output Sensitivity
Table 46:
PDF: 09005aef826aaadc/Source: 09005aef82a357c3
DDR3_D3.fm - Rev G 2/09 EN
MR1[5,1]
R
R
R
Pull-up/pull-down mismatch (MM
ON
ON
ON
0,0
@ 0.8 × V
@ 0.5 × V
@ 0.2 × V
Symbol
34Ω Output Driver Voltage and Temperature Sensitivity
40Ω Driver Impedance Characteristics
40Ω Output Driver Sensitivity Definition
DD
DD
DD
R
40Ω
ON
Q
Q
Q
Notes:
Notes:
0.9 - dR
0.9 - dR
0.9 - dR
1. Tolerance limits assume RZQ of 240Ω (±1%) and are applicable after proper ZQ calibration
2. Measurement definition for mismatch between pull-up and pull-down (MM
3. For IT devices, the minimum values are derated by six% when the device operates between
If either the temperature or the voltage changes after I/O calibration, the tolerance limits
listed in Table 45 can be expected to widen according to Table 46 and Table 47 on
page 61.
1. ΔT = T - T(@ calibration), ΔV = V
Resistor
R
R
has been performed at a stable temperature and voltage (V
“40 Ohm Driver Output Sensitivity” on page 60 if either the temperature or the voltage
changes after calibration.
both R
–40°C and 0°C (T
ON 40PD
ON 40PU
ON
ON
ON
dR
dR
dR
dR
dR
dR
PUPD
dTM × |ΔT| - dR
Change
MM
dTH × |ΔT| - dR
dTL × |ΔT| - dR
ON
ON
ON
ON
ON PU
ON
ON
)
dVM
dTM
dVH
dTH
dVL
dTL
P UP D
Min
and R
0.2 × V
0.5 × V
0.8 × V
0.2 × V
0.5 × V
0.8 × V
0.5 × V
C
V
=
ON PD
).
OUT
ON
ON
ON
R
------------------------------------ -
DD
DD
DD
DD
DD
DD
DD
ON
dVH × |ΔV|
dVM × |ΔV|
dVL × |ΔV|
R
Q
Q
Q
Q
Q
Q
Q
at 0.5 × V
ON
P U
Nom
60
Min
R
–10%
DD
0
Min
0
0
0
0
0
0.6
0.9
0.9
0.9
0.9
0.6
ON
DD
Q - V
Q:
P D
x
1.1 + dR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1.1 + dR
DD
100
1.1 + dR
Q(@ calibration), and V
Nom
ON
n/a
1.0
1.0
1.0
1.0
1.0
1.0
ON
ON
dTM × |ΔT| + dR
2Gb: x4, x8, x16 DDR3 SDRAM
dTH × |ΔT| + dR
dTL × |ΔT| + dR
Max
0.13
0.13
0.13
1.5
1.5
1.5
Output Driver Impedance
Max
DD
Max
1.1
1.1
1.4
1.4
1.1
1.1
Q = V
10
©2006 Micron Technology, Inc. All rights reserved.
ON
ON
ON
DD
DD
dVH × |ΔV|
dVM × |ΔV|
dVL × |ΔV|
= V
, V
DD
SS
RZQ/6
RZQ/6
RZQ/6
RZQ/6
RZQ/6
RZQ/6
Units
Q.
Q = V
%
PUPD
%/mV
%/mV
%/mV
Units
%/°C
%/°C
%/°C
SS
). Measure
). Refer to
RZQ/6
RZQ/6
RZQ/6
Units
Notes
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2

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