mc68hc908qf4 Freescale Semiconductor, Inc, mc68hc908qf4 Datasheet - Page 32

• Manufacturer Part Number: mc68hc908qf4
• Description: M68hc08 Microcontrollers Microcontroller
• Manufacturer: Freescale Semiconductor, Inc

Memory
2.6.3 FLASH Mass Erase Operation
2.6.4 FLASH Program Operation
Data Sheet
32
NOTE:
NOTE:
NOTE:
Use the following procedure to erase the entire FLASH memory to read as 1:
Mass erase is disabled whenever any block is protected (FLBPR does not equal
$FF).
Programming and erasing of FLASH locations cannot be performed by code being
executed from the FLASH memory. While these operations must be performed in
the order as shown, but other unrelated operations may occur between the steps.
Programming of the FLASH memory is done on a row basis. A row consists of 32
consecutive bytes starting from addresses $XX00, $XX20, $XX40, $XX60, $XX80,
$XXA0, $XXC0, or $XXE0. Use the following step-by-step procedure to program a
row of FLASH memory
Figure 2-4
Only bytes which are currently $FF may be programmed.
1. When in monitor mode, with security sequence failed (see
10. After time, t
block protect register instead of any FLASH address.
1. Set both the ERASE bit and the MASS bit in the FLASH control register.
2. Read from the FLASH block protect register.
3. Write any data to any FLASH address
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE and MASS bits.
8. Wait for a time, t
9. Clear the HVEN bit.
1. Set the PGM bit. This configures the memory for program operation and
2. Read from the FLASH block protect register.
3. Write any data to any FLASH location within the address range desired.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
range.
again.
enables the latching of address and data for programming.
Freescale Semiconductor, Inc.
For More Information On This Product,
shows a flowchart of the programming algorithm.
Go to: www.freescale.com
RCV
(typical 1 µs), the memory can be accessed in read mode
NVS
Erase
NVH1
NVS
PGS
Memory
(minimum 10 µs).
(minimum 10 µs).
(minimum 5 µs).
(minimum 4 ms).
(minimum 100 µs).
(1)
within the FLASH memory address
16.3.2
Security), write to the FLASH
MC68HC908QF4 — Rev. 1.0
MOTOROLA