R5F21257SNFP#U0 Renesas Electronics America, R5F21257SNFP#U0 Datasheet - Page 446

IC R8C/25 MCU FLASH 52LQFP

R5F21257SNFP#U0

Manufacturer Part Number
R5F21257SNFP#U0
Description
IC R8C/25 MCU FLASH 52LQFP
Manufacturer
Renesas Electronics America
Series
R8C/2x/25r
Datasheets

Specifications of R5F21257SNFP#U0

Core Processor
R8C
Core Size
16/32-Bit
Speed
20MHz
Connectivity
I²C, LIN, SIO, SSU, UART/USART
Peripherals
POR, Voltage Detect, WDT
Number Of I /o
41
Program Memory Size
48KB (48K x 8)
Program Memory Type
FLASH
Ram Size
2.5K x 8
Voltage - Supply (vcc/vdd)
2.2 V ~ 5.5 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 85°C
Package / Case
52-LQFP
For Use With
R0K521256S000BE - KIT EVAL STARTER FOR R8C/25
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

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R8C/24 Group, R8C/25 Group
Rev.3.00
REJ09B0244-0300
19.7.1.4
19.7.1.5
19.7.1.6
19.7.1.7
19.7.1.8
Write 0 before writing 1 when setting the FMR01, FMR02, or FMR11 bit to 1. Do not generate an interrupt
between writing 0 and 1.
In EW0 Mode, if the supply voltage drops while rewriting any block in which a rewrite control program is
stored, it may not be possible to rewrite the flash memory because the rewrite control program cannot be
rewritten correctly. In this case, use standard serial I/O mode.
Do not write additions to the already programmed address.
Do not enter stop mode or wait mode during erase-suspend.
To perform programming and erasure, use VCC = 2.7 to 5.5 V as the supply voltage. Do not perform
programming and erasure at less than 2.7 V.
Feb 29, 2008
How to Access
Rewriting User ROM Area
Entering Stop Mode or Wait Mode
Program and Erase Voltage for Flash Memory
Program
Page 427 of 485
19. Flash Memory

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