EP4CE55F23C8 Altera, EP4CE55F23C8 Datasheet - Page 159

no-image

EP4CE55F23C8

Manufacturer Part Number
EP4CE55F23C8
Description
IC CYCLONE IV FPGA 55K 484FBGA
Manufacturer
Altera
Series
CYCLONE® IV Er

Specifications of EP4CE55F23C8

Number Of Logic Elements/cells
55856
Number Of Labs/clbs
3491
Total Ram Bits
2340000
Number Of I /o
324
Voltage - Supply
1.15 V ~ 1.25 V
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 85°C
Package / Case
484-FBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Number Of Gates
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EP4CE55F23C8
Manufacturer:
ALTERA
Quantity:
784
Part Number:
EP4CE55F23C8
Manufacturer:
Altera
Quantity:
10 000
Part Number:
EP4CE55F23C8
Manufacturer:
ALTERA
0
Part Number:
EP4CE55F23C8L
Manufacturer:
Altera
Quantity:
10 000
Part Number:
EP4CE55F23C8LN
Manufacturer:
ALTERA
Quantity:
364
Part Number:
EP4CE55F23C8LN
Manufacturer:
Altera
Quantity:
10 000
Part Number:
EP4CE55F23C8LN
Manufacturer:
ALTERA
0
Part Number:
EP4CE55F23C8LN
Manufacturer:
ALTERA/阿尔特拉
Quantity:
20 000
Part Number:
EP4CE55F23C8N
Manufacturer:
ALTERA
Quantity:
852
Part Number:
EP4CE55F23C8N
Manufacturer:
ALTERA
Quantity:
20 000
Part Number:
EP4CE55F23C8N
0
Chapter 7: External Memory Interfaces in Cyclone IV Devices
Cyclone IV Devices Memory Interfaces Pin Support
Address and Control/Command Pins
Memory Clock Pins
© December 2010 Altera Corporation
f
1
1
Some DDR2 SDRAM and DDR SDRAM devices support error correction coding
(ECC), a method of detecting and automatically correcting errors in data
transmission. In 72-bit DDR2 or DDR SDRAM, there are eight ECC pins and 64 data
pins. Connect the DDR2 and DDR SDRAM ECC pins to a separate DQS or DQ group
in Cyclone IV devices. The memory controller needs additional logic to encode and
decode the ECC data.
The address signals and the control or command signals are typically sent at a single
data rate. You can use any of the user I/O pins on all I/O banks of Cyclone IV devices
to generate the address and control or command signals to the memory device.
Cyclone IV devices do not support QDR II SRAM in the burst length of two.
In DDR2 and DDR SDRAM memory interfaces, the memory clock signals (CK and
CK#) are used to capture the address signals and the control or command signals.
Similarly, QDR II SRAM devices use the write clocks (K and K#) to capture the
address and command signals. The CK/CK# and K/K# signals are generated to
resemble the write-data strobe using the DDIO registers in Cyclone IV devices.
CK/CK# pins must be placed on differential I/O pins (DIFFIO in Pin Planner) and in
the same bank or on the same side as the data pins. You can use either side of the
device for wraparound interfaces. As seen in the Pin Planner Pad View, CK0 cannot be
located in the same row and column pad group as any of the interfacing DQ pins.
For more information about memory clock pin placement, refer to
Pin, and Board Layout Guidelines
of the External Memory Interface Handbook.
Cyclone IV Device Handbook, Volume 1
Volume 2: Device,
7–11

Related parts for EP4CE55F23C8