hyb18t512160af-5 Infineon Technologies Corporation, hyb18t512160af-5 Datasheet - Page 13

• Manufacturer Part Number: hyb18t512160af-5
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

1.3
Table 3
Part Number
HYB18T512400AF–5
HYB18T512800AF–5
HYB18T512160AF–5
HYB18T512400AF–3.7 ×4
HYB18T512800AF–3.7 ×8
HYB18T512160AF–3.7 ×16
HYB18T512400AF–3
HYB18T512800AF–3
HYB18T512160AF–3
HYB18T512400AF–3S ×4
HYB18T512800AF–3S ×8
HYB18T512160AF–3S ×16
1) CAS: Column Adress Strobe
2) RCD: Row Column Delay
3) RP: Row Precharge
Note: For product nomenclature see
Data Sheet
Ordering Information
Ordering Information for RoHS compliant products
Org. Speed
×4
×8
×16
×4
×8
×16
DDR2–400 3–3–3
DDR2–533 4–4–4
DDR2–667 4–4–4
Chapter 10
CAS
Latencies
5–5–5
1)
of this data sheet
RCD
2)
13
RP
3)
Clock
(MHz)
200
266
333
333
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
CAS
Latencies
—
3–3–3
3–3–3
4–4–4
1)
RCD
2)
512-Mbit DDR2 SDRAM
RP
3)
09112003-SDM9-IQ3P
266
Clock
(MHz)
—
200
200
Rev. 1.3, 2005-01
Package
P-TFBGA-84
P-TFBGA-84
P-TFBGA-84
P-TFBGA-60
P-TFBGA-84
P-TFBGA-60
P-TFBGA-60
P-TFBGA-60
Overview