hyb18t512160af-5 Infineon Technologies Corporation, hyb18t512160af-5 Datasheet - Page 26

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hyb18t512160af-5

Manufacturer Part Number
hyb18t512160af-5
Description
512-mbit Ddr2 Sdram
Manufacturer
Infineon Technologies Corporation
Datasheet
Figure 6
Note:
1. 32Mb × 16 Organisation with 13 Row, 2 Bank and
2. This Functional Block Diagram is intended to
Data Sheet
10 Column External Adresses
facilitate user understanding of the operation of the
Block Diagram 8 Mbit × 16 I/O ×4 Internal Memory Banks
26
3. LDM, UDM is a unidirectional signal (input only), but
device; it does not represent an actual circuit
implementation.
is internally loaded to match the load of the
bidirectional LDQS and UDQS signals.
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
Pin Configuration and Block Diagrams
512-Mbit DDR2 SDRAM
09112003-SDM9-IQ3P
Rev. 1.3, 2005-01

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