hyb18t512160af-5 Infineon Technologies Corporation, hyb18t512160af-5 Datasheet - Page 63

• Manufacturer Part Number: hyb18t512160af-5
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

Figure 47
RL = 5 (AL = 2, CL = 3), BL = 4,
Figure 48
RL = 5 (AL = 2, CL = 3), BL = 4,
Data Sheet
C M D
C K , C K
D Q S ,
D Q S
C K , C K
C M D
D Q
D Q S ,
D Q S
D Q
P o ste d C A S
R E A D w /A P
P o ste d C A S
R E A D w /A P
A10 ="high"
A10 ="high"
T0
Read with Auto-Precharge Example 1, followed by an Activation to the Same Bank (
Read with Auto-Precharge Example 2, followed by an Activation to the Same Bank (
T0
AL = 2
AL = 2
T1
T1
N O P
N O P
tRAS(min)
tRCmin.
AL + BL/2
tRAS
tRC
t
t
RTP
RTP
RL = 5
T2
RL = 5
T2
N O P
N O P
≤ 2 CKs
≤ 2 CKs
CL = 3
CL = 3
T3
T3
N O P
N O P
A u to -P re ch a rg e B e g in s
A u to -P re ch a rg e B e g in s
63
T4
T4
N O P
N O P
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
T5
T5
N O P
Dout A0
N O P
Dout A0
tRP
Dout A1
Dout A1
tRP
T6
T6
N O P
N O P
Dout A2
Dout A2
512-Mbit DDR2 SDRAM
Dout A3
Dout A3
Functional Description
T7
T7
A ctiv a te
N O P
09112003-SDM9-IQ3P
B a n k
Rev. 1.3, 2005-01
BR-AP5231
A ctiva te
T8
BR-AP5232
T8
B a n k
N O P
t
RAS
t
RC
Limit)
Limit)