hyb18t512160af-5 Infineon Technologies Corporation, hyb18t512160af-5 Datasheet - Page 93

• Manufacturer Part Number: hyb18t512160af-5
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

Table 46
Product Type Speed Code
Speed Grade
Symbol
I
I
I
I
I
I
I
I
I
I
I
I
I
1) MRS(12)=0
2) MRS(12)=1
3) 0 ≤ T
4) standard products
Data Sheet
DD0
DD1
DD2N
DD2P
DD2Q
DD3N
DD3P
DD4R
DD4W
DD5B
DD5D
DD6
DD7
CASE
≤ 85 °C
I
DD
Specification for DDR2–667C and DDR2-667D
–3
DDR2–667C
Max.
75
95
90
110
50
5
40
50
19
6
130
150
140
170
140
6
5
155
240
Currents Measurement Specifications and Conditions
93
–3S
DDR2–667D
Max.
71
90
85
104
50
5
40
50
19
6
130
150
140
170
140
6
5
147
228
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
512-Mbit DDR2 SDRAM
09112003-SDM9-IQ3P
Rev. 1.3, 2005-01
Note
×4/×8
×16
×4/×8
×16
1)
2)
×4/×8
×16
×4/×8
×16
3)
3)
3)4)
×4/×8
×16
×4/×8
×16