hyb18t512160af-5 Infineon Technologies Corporation, hyb18t512160af-5 Datasheet - Page 16

• Manufacturer Part Number: hyb18t512160af-5
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

Table 4
Ball#/Pin#
M8
M3
M7
N2
N8
N3
N7
P2
P8
P3
M2
P7
R2
Data Signals ×4/×8 organizations
C8
C2
D7
D3
Data Signals ×8 organization
D1
D9
B1
B9
Data Signals ×16 organization
Data Sheet
Pin Configuration of DDR SDRAM
Name
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
AP
A11
A12
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
Pin
Type
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
Buffer
Type
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
Function
Address Signal 12:0, Address Signal 10/Autoprecharge
Data Signal 3:0
Note: Bi-directional data bus. DQ[3:0] for
Data Signal 7:4
for
16
×
8 components
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
Pin Configuration and Block Diagrams
512-Mbit DDR2 SDRAM
×
4 components, DQ[7:0]
09112003-SDM9-IQ3P
Rev. 1.3, 2005-01