hyb18t512160af-5 Infineon Technologies Corporation, hyb18t512160af-5 Datasheet - Page 61

• Manufacturer Part Number: hyb18t512160af-5
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

Figure 45
WL = (RL - 1) = 3, BL = 4,
Figure 46
WL = (RL - 1) = 4, BL = 4,
Data Sheet
CMD
CMD
DQS,
DQS
CK, CK
CK, CK
DQ
DQS,
DQS
DQ
Posted CAS
Posted CAS
WRITE A
T0
WRITE A
T0
Write followed by Precharge Example 1
Write followed by Precharge Example 2
T1
T1
NOP
NOP
WL = 3
WL = 4
t
WR
t
WR
= 3
= 3
T2
T2
NOP
NOP
DIN A0
T3
T3
NOP
NOP
DIN A1
DIN A2
DIN A0
T4
T4
NOP
NOP
61
DIN A1
DIN A3
DIN A2
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
T5
T5
NOP
NOP
Completion of
the Burst Write
DIN A3
T6
T6
NOP
NOP
tWR
Completion of
the Burst Write
512-Mbit DDR2 SDRAM
tWR
T7
T7
NOP
NOP
Functional Description
09112003-SDM9-IQ3P
Rev. 1.3, 2005-01
Precharge
Precharge
T9
T8
A
A
BW-P4
BW-P3