hyb18t512160af-5 Infineon Technologies Corporation, hyb18t512160af-5 Datasheet - Page 71

• Manufacturer Part Number: hyb18t512160af-5
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

Figure 56
Note: Active Power-Down mode exit timing t
Figure 57
WL = 2,
Note: Active Power-Down mode exit timing
Data Sheet
D Q S ,
D Q S
C K E
C K , C K
C M D
D Q
state in the MR, address bit A12.
state in the MR, address bit A12.
R E A D w /A P
C K , C K
C K E
C M D
t
T0
WTR
R E A D
AL = 1
Active Power-Down Mode Entry and Exit Example after a Read Command
Active Power-Down Mode Entry and Exit Example after a Write Command
= 2, BL = 4
P re ch a rg e
T0
*)
T1
N O P
CL = 3
RL = 4
Power-Down
Precharge
Entry
T1
N O P
T2
tRP
N O P
RL + BL/2
T2
T3
N O P
N O P
t
T4
XARD
XARD
N O P
T3
Dout A0
N O P
tIS
(“fast exit”) or t
(“fast exit”) or
Dout A1
T5
N O P
Dout A2
N O P
71
Dout A3
Power-Down
T6
Precharge
N O P
t
Tn
Exit
XARDS
XARDS
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
N O P
Power-Down
tIS
Active
Entry
T7
(“slow exit”) depends on the programmed
(“slow exit”) depends on the programmed
N O P
Tn+1
tIS
tXP
N O P
T8
N O P
Power-Down
Tn+2
512-Mbit DDR2 SDRAM
C om m a nd
V a lid
Active
Exit
Tn
N O P
Functional Description
tIS
09112003-SDM9-IQ3P
tXARD or
tXARDS *)
Tn+1
N O P
Rev. 1.3, 2005-01
N O P
Tn+2
C o m m an d
V a lid
Act.PD 1