hyb18t512160af-5 Infineon Technologies Corporation, hyb18t512160af-5 Datasheet - Page 82

• Manufacturer Part Number: hyb18t512160af-5
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

5.5
DDR2 SDRAM output driver characteristics are defined
for full strength default operation as selected by the
EMRS(1) bits A[9:7] =’111’.
Table 34
Voltage (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
1) The driver characteristics evaluation conditions are Minimum 95 °C (
2) The driver characteristics evaluation conditions are Nominal Default 25 °C (
3) The driver characteristics evaluation conditions are Maximum 0 °C (
Data Sheet
Full Strength Output V-I Characteristics
Full Strength Default Pull-up Driver Characteristics
Pull-up Driver Current [mA]
Min.
0.00
–4.30
–8.6
–12.9
–16.9
–20.05
–22.10
–23.27
–24.10
–24.73
–25.23
–25.65
–26.02
–26.35
–26.65
–26.93
–27.20
–27.46
—
—
1)
Figure 66
and
IBIS Target low
0.00
–5.55
–11.10
–16.0
–20.3
–24.0
–27.2
–29.8
–31.9
–33.4
–34.6
–35.5
–36.2
–36.8
–37.2
–37.7
–38.0
–38.4
–38.6
—
Figure 67
82
2)
show the driver characteristics graphically and the
tables show the same data suitable for input into
simulation tools.
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
T
T
CASE
IBIS Target high
0.00
–5.90
–11.8
–17.0
–22.2
–27.5
–32.4
–36.9
–40.8
–44.5
–47.7
–50.4
–52.5
–54.2
–55.9
–57.1
–58.4
–59.6
–60.8
—
CASE
).
),
T
V
V
CASE
DDQ
DDQ
),
= 1.9 V, fast–fast process
= 1.7 V, slow–slow process
V
AC & DC Operating Conditions
DDQ
512-Mbit DDR2 SDRAM
= 1.8 V, typical process
2)
09112003-SDM9-IQ3P
Max.
0.00
–7.95
–15.90
–23.85
–31.80
–39.75
–47.70
–55.55
–62.95
–69.55
–75.35
–80.35
–84.55
–87.95
–90.70
–93.00
–95.05
–97.05
–99.05
–101.05
Rev. 1.3, 2005-01
3)