hyb18t512160af-5 Infineon Technologies Corporation, hyb18t512160af-5 Datasheet - Page 59

• Manufacturer Part Number: hyb18t512160af-5
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

Figure 41
RL = 4 (AL = 1, CL = 3), BL = 8,
Figure 42
RL = 5 (AL = 2, CL = 3), BL = 4,
Data Sheet
DQS,
DQS
CMD
CK, CK
CMD
DQS,
DQS
CK, CK
DQ
DQ
Posted CAS
Posted CAS
T0
READ A
T0
READ A
Read Operation Followed by Precharge Example 2
Read Operation Followed by Precharge Example 3
AL = 1
first 4-bit prefetch
AL = 2
T1
AL + BL/2 clks
T1
AL + BL/2 clks
NOP
NOP
RL = 5
>=tRAS
>=tRAS
RL = 4
CL = 3
t
t
T2
T2
RTP
RTP
NOP
NOP
>=tRC
second 4-bit prefetch
≤ 2 CKs
≤ 2 CKs
>=tRC
>=tRTP
T3
T3
CL = 3
NOP
NOP
>=tRTP
Precharge
T4
T4
59
NOP
Dout A0
CL = 3
CL = 3
Dout A1
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
Precharge
T5
T5
NOP
Dout A0
Dout A2
tRP
Dout A1
Dout A3
T6
T6
NOP
NOP
Dout A2
Dout A4
tRP
512-Mbit DDR2 SDRAM
Dout A3
Dout A5
T7
T7
Bank A
Activate
Functional Description
NOP
09112003-SDM9-IQ3P
Dout A6
Rev. 1.3, 2005-01
Dout A7
T8
T8
Bank A
Activate
BR-P523
NOP
BR-P413(8)