hyb18t512160af-5 Infineon Technologies Corporation, hyb18t512160af-5 Datasheet - Page 23

• Manufacturer Part Number: hyb18t512160af-5
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

2.2
Table 7
Configuration
Bank Address
Number of Banks
Auto-Precharge
Row Address
Column Address
Number of Column
Address Bits
Number of I/Os
Page Size [Bytes]
1) Refered to as ’colbits’
2) Refered to as ’org’
3) PageSize = 2
Data Sheet
512 Mbit DDR2 Addressing
512 Mbit DDR2 Addressing
colbits
× org/8 [Bytes
128 Mb x 4
BA[1:0]
4
A10 / AP
A[13:0]
A11, A[9:0]
11
4
1024 (1K)
BA[1:0]
4
A[13:0]
A[9:0]
10
64 Mb x 8
A10 / AP
8
1024 (1K)
23
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
32 Mb x 16
BA[1:0]
4
A10 / AP
A[12:0]
A[9:0]
10
16
2048 (2K)
Pin Configuration and Block Diagrams
512-Mbit DDR2 SDRAM
09112003-SDM9-IQ3P
Note
1)
2)
3)
Rev. 1.3, 2005-01