hyb18t512160af-5 Infineon Technologies Corporation, hyb18t512160af-5 Datasheet - Page 89

• Manufacturer Part Number: hyb18t512160af-5
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

5.8
Power and Ground clamps are provided on address
(A[13:0], BA[11:0]), RAS, CAS, CS, WE, and ODT pins.
Table 41
Voltage across clamp (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
5.9
Table 42
Parameter
Maximum peak amplitude allowed for overshoot area 0.9
Maximum peak amplitude allowed for undershoot area 0.9
Maximum overshoot area above
Maximum undershoot area below
Data Sheet
Power & Ground Clamp V-I Characteristics
Power & Ground Clamp V-I Characteristics
Overshoot and Undershoot Specification
AC Overshoot / Undershoot Specification for Address and Control Pins
V
V
DD
SS
Minimum Power Clamp
Current (mA)
0
0
0
0
0
0
0
0
0.1
1.0
2.5
4.7
6.8
9.1
11.0
13.5
16.0
18.2
21.0
89
DDR2-400
1.33
1.33
The V-I characteristics for pins with clamps is shown in
Table
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
41.
Minimum Ground Clamp Current (mA)
0
0
0
0
0
0
0
0
0.1
1.0
2.5
4.7
6.8
9.1
11.0
13.5
16.0
18.2
21.0
DDR2-533
0.9
0.9
1.00
1.00
AC & DC Operating Conditions
512-Mbit DDR2 SDRAM
DD2-667
0.9
0.9
0.80
0.80
09112003-SDM9-IQ3P
Rev. 1.3, 2005-01
Unit
V
V
V.ns
V.ns