hyb18t512160af-5 Infineon Technologies Corporation, hyb18t512160af-5 Datasheet - Page 64

• Manufacturer Part Number: hyb18t512160af-5
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

Figure 49
RL = 4 (AL = 1, CL = 3), BL = 8,
Figure 50
RL = 5 (AL = 1, CL = 4), BL = 4,
Data Sheet
CMD
CK, CK
DQS,
DQS
C K , C K
C M D
DQ
D Q S ,
D Q S
D Q
Posted CAS
READ w/AP
P o ste d C A S
R E A D w /A P
A10 ="high"
T0
A10 ="high"
T0
Read with Auto-Precharge Example 3, followed by an Activation to the Same Bank
Read with Auto-Precharge Example 4, followed by an Activation to the Same Bank,
AL = 1
AL = 1
first 4-bit prefetch
first 4-bit prefetch
T1
T1
NOP
N O P
AL + tRTP + tRP
t
t
RTP
RTP
T2
CL = 4
RL = 5
tRTP
CL = 3
T2
RL = 4
NOP
N O P
≤ 2 CKs
= 3 CKs
second 4-bit prefetch
AL + BL/2
Auto-Precharge Begins
T3
T3
NOP
N O P
>= tRTP
64
T4
T4
NOP
N O P
Dout A0
A u to -P re ch a rg e B e g in s
Dout A1
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
T5
T5
NOP
N O P
Dout A0
Dout A2
Dout A1
Dout A3
tRP
T6
T6
NOP
N O P
tRP
Dout A2
Dout A4
512-Mbit DDR2 SDRAM
Dout A3
Dout A5
T7
Functional Description
T7
NOP
09112003-SDM9-IQ3P
N O P
Dout A6
Rev. 1.3, 2005-01
Dout A7
Activate
BR-AP4133
T8
BR-AP413(8)2
T8
A ctiva te
Bank
B a n k