hyb18t512160af-5 Infineon Technologies Corporation, hyb18t512160af-5 Datasheet - Page 25

• Manufacturer Part Number: hyb18t512160af-5
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

Figure 5
Note:
1. 64Mb × 8 Organisation with 14 Row, 2 Bank and 10
2. This Functional Block Diagram is intended to
Data Sheet
Column External Adresses
facilitate user understanding of the operation of the
Block Diagram 16 Mbit × 8 I/O ×4 Internal Memory Banks
25
3. DM is a unidirectional signal (input only), but is
device; it does not represent an actual circuit
implementation.
internally loaded to match the load of the
bidirectional DQ and DQS signals.
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
Pin Configuration and Block Diagrams
512-Mbit DDR2 SDRAM
09112003-SDM9-IQ3P
Rev. 1.3, 2005-01