M30800SFP-BL#U5 Renesas Electronics America, M30800SFP-BL#U5 Datasheet - Page 286

MCU 3/5V 0K,PB-FREE 100-QFP

M30800SFP-BL#U5

Manufacturer Part Number
M30800SFP-BL#U5
Description
MCU 3/5V 0K,PB-FREE 100-QFP
Manufacturer
Renesas Electronics America
Series
M16C™ M16C/80r
Datasheet

Specifications of M30800SFP-BL#U5

Core Processor
M16C/80
Core Size
16-Bit
Speed
20MHz
Connectivity
SIO, UART/USART
Peripherals
DMA, PWM, WDT
Number Of I /o
45
Program Memory Type
ROMless
Ram Size
10K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 85°C
Package / Case
100-QFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-

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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M30800SFP-BL#U5M30800SFP-BL#D5
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Company:
Part Number:
M30800SFP-BL#U5
Manufacturer:
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Quantity:
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M
R
R
Flash Memory
e
E
1
v
J
6
Figure 29.3 Block diagram of flash memory version
1 .
0
C
The M16C/80 (flash memory version) contains the flash memory that can be rewritten with a single voltage
of 5 V. For this flash memory, three flash memory modes are available in which to read, program, and
erase: parallel I/O and standard serial I/O modes in which the flash memory can be manipulated using a
programmer and a CPU rewrite mode in which the flash memory can be manipulated by the Central Pro-
cessing Unit (CPU). Each mode is detailed in the pages to follow.
The flash memory is divided into several blocks as shown in Figure 29.3, so that memory can be erased
one block at a time. Each block has a lock bit to enable or disable execution of an erase or program
operation, allowing for data in each block to be protected.
In addition to the ordinary user ROM area to store a microcomputer operation control program, the flash
memory has a boot ROM area that is used to store a program to control rewriting in CPU rewrite and
standard serial I/O modes. This boot ROM area has had a standard serial I/O mode control program stored
in it when shipped from the factory. However, the user can write a rewrite control program in this area that
suits the user’s application system. This boot ROM area can be rewritten in only parallel I/O mode.
9
0 .
8 /
B
0
0
0
1
A
G
8
u
7
o r
. g
0 -
u
1
0
p
0FC0000
0
0FD0000
0FE0000
0FFA000
0FFC000
0FFFFFF
0FF0000
, 2
0FF8000
0
2
0
0
5
Page 273
16
16
16
16
16
16
16
16
Block 6 : 64K byte
Block 1 : 8K byte
Block 3 : 32K byte
Block 2 : 8K byte
Block 0 : 16K byte
Block 5 : 64K byte
Block 4 : 64K byte
User ROM area
f o
3
2
9
Note 1: The boot ROM area can be rewritten in
Note 2: To specify a block, use the maximum
0FFE000
0FFFFFF
only parallel input/output mode. (Access
to any other areas is inhibited.)
address in the block that is an even
address.
Flash memory
128Kbytes
256Kbytes
16
16
size
Boot ROM area
8K byte
Flash memory
start address
0FE0000
0FC0000
29. Flash Memory Version
16
16

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