DF2268FA13V Renesas Electronics America, DF2268FA13V Datasheet - Page 671

• Manufacturer Part Number: DF2268FA13V
• Description: IC H8S/2268 MCU FLASH 100QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2200r

Specifications of DF2268FA13V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 13MHz
• Connectivity: I²C, SCI, SmartCard
• Peripherals: LCD, POR, PWM, WDT
• Number Of I /o: 67
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-QFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

25.2.8
Table 25.13 shows the flash memory characteristics.
Table 25.13 Flash Memory Characteristics
Condition: V
Item
Programming time *
Erase time *
Count of rewriting
Data retention time
Programming Wait time after SWE1 bit setting *
Erase
Flash Memory Characteristics
1
T
specification)
*
3
a
CC
*
= –25°C to +75°C (Programming/erasing operating temperature range: regular
Wait time after PSU1 bit setting *
Wait time after P1 bit setting *
Wait time after P1 bit clear *
Wait time after PSU1 bit clear *
Wait time after PV1 bit setting *
Wait time after H'FF dummy write *
Wait time after PV1 bit clear *
Wait time after SWE1 bit clear
Maximum programming count *
Wait time after SWE1 bit setting *
Wait time after ESU1 bit setting *
Wait time after E1 bit setting *
Wait time after E1 bit clear *
Wait time after ESU1 bit clear *
Wait time after EV1 bit setting *
Wait time after H'FF dummy write *
Wait time after EV1 bit clear *
Wait time after SWE1 bit clear
Maximum erase count *
5
= 3.0 V to 5.5 V, AV
1
*
2
*
4
1
*
5
CC
1
1
= 2.7 V to 5.5 V, V
1
1
1
1
*
*
1
1
1
1
1
5
4
*
1
1
4
1
1
1
1
Symbol Min.
t
t
N
T
t
t
t
t
t
t
t
t
t
t
t
N1
N2
t
t
t
t
t
t
t
t
t
N
p
E
sswe
spsu
sp10
sp30
sp200
cp
cpsu
spv
spvr
cpv
cswe
sswe
sesu
se
ce
cesu
sev
sevr
cev
cswe
DRP
WEC
*
8
⎯
⎯
100 *
10
1
50
8
28
198
5
4
2
2
100
⎯
⎯
⎯
1
100
10
10
10
20
2
4
100
⎯
Rev. 5.00 Sep. 01, 2009 Page 619 of 656
ref
6
= 2.7 V to AV
Section 25 Electrical Characteristics
Typ.
30
100
10000 *
⎯
1
50
10
30
200
5
4
2
2
100
⎯
⎯
⎯
1
100
10
10
10
20
2
4
100
⎯
7
Max. Unit
200
1200 ms/block
⎯
⎯
⎯
⎯
12
32
202
⎯
⎯
⎯
⎯
⎯
⎯
6 *
994 *
⎯
⎯
100
⎯
⎯
⎯
⎯
⎯
⎯
100
4
CC
4
, V
ms/
128 bytes
Times
μs
μs
μs
μs
μs
μs
Times
Times
μs
μs
ms
μs
μs
μs
Year
μs
μs
μs
μs
μs
μs
μs
μs
Times
SS
REJ09B0071-0500
= AV
SS
Test
Condition
6 ≥ n ≥ 1
1000 ≥ n ≥ 7
= 0 V,