DF2377RVFQ33W Renesas Electronics America, DF2377RVFQ33W Datasheet - Page 298
DF2377RVFQ33W
Manufacturer Part Number
DF2377RVFQ33W
Description
IC H8S MCU FLASH 3V 384K 144LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.YR0K42378FC000BA.pdf
(1208 pages)
Specifications of DF2377RVFQ33W
Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
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Quantity
Price
Company:
Part Number:
DF2377RVFQ33W
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Part Number:
DF2377RVFQ33WV
Manufacturer:
Renesas Electronics America
Quantity:
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Section 6 Bus Controller (BSC)
Rev.7.00 Mar. 18, 2009 page 230 of 1136
REJ09B0109-0700
(Address shift size set to 8 bits)
DCTL
Figure 6.51 Example of DQMU and DQML Byte Control
This LSI
Notes: 1. Bank control is not available.
CS5 (SDRAMφ)
UCAS (DQMU)
LCAS (DQML)
2. The CKE and CS pins must be fixed to 1 when the power supply is input.
3. The CS pin must be fixed to 0 before accessing synchronous DRAM.
D15 to D0
CS2 (RAS)
CS3 (CAS)
I/O PORT
CS4 (WE)
OE (CKE)
A23
A21
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
64-Mbit synchronous DRAM
1 Mword × 16 bits × 4-bank configuration
8-bit column address
DQMU
RAS
CAS
WE
A13 (BS1)
A12 (BS0)
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
DQ15 to DQ0
CKE
CS
CLK
DQML
address: A13/A12
input: A11 to A0
Column address
input: A7 to A0
Row address
Bank select
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