DF2377RVFQ33W Renesas Electronics America, DF2377RVFQ33W Datasheet - Page 978

• Manufacturer Part Number: DF2377RVFQ33W
• Description: IC H8S MCU FLASH 3V 384K 144LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2377RVFQ33W

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 97
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 6x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 21 Flash Memory (0.18-μm F-ZTAT Version)
The area that can be executed in the steps of the user procedure program (on-chip RAM, user
MAT, and external space) is shown in section 21.4.4, Procedure Program and Storable Area for
Programming Data.
21.4.4
In the descriptions in the previous section, the programming/erasing procedure programs and
storable areas for program data are assumed to be in the on-chip RAM. However, the program and
the data can be stored in and executed from other areas, such as part of flash memory which is not
to be programmed or erased, or somewhere in the external address space.
(1)
1. The on-chip programming/erasing program is downloaded from the address in the on-chip
2. The on-chip programming/erasing program will use the 128 bytes as a stack. So, make sure
3. Download by setting the SCO bit to 1 will lead to switching of the MAT. If, therefore, this
4. The flash memory is accessible until the start of programming or erasing, that is, until the
5. The flash memory is not accessible during programming/erasing operations, therefore, the
6. After programming/erasing, the flash memory should be inhibited until FKEY is cleared.
7. Switching of the MATs by FMATS should be needed when programming/erasing of the user
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RAM specified by FTDAR, therefore, this area is not available for use.
that this area is secured.
operation is used, it should be executed from the on-chip RAM.
result of downloading has been determined. When in a mode in which the external address
space is not accessible, such as single-chip mode, the required procedure programs, NMI
handling vector and NMI handler should be transferred to the on-chip RAM before
programming/erasing of the flash memory starts.
operation program is downloaded to the on-chip RAM to be executed. The NMI-handling
vector and programs such as that which activate the operation program, and NMI handler
should thus be stored in on-chip memory other than flash memory or the external address
space.
The reset state (RES = 0) must be in place for more than 100 μs when the LSI mode is changed
to reset on completion of a programming/erasing operation.
Transitions to the reset state, and hardware standby mode are inhibited during
programming/erasing. When the reset signal is accidentally input to the chip, a longer period in
the reset state than usual (100 μs) is needed before the reset signal is released.
boot MAT is operated in user-boot mode. The program which switches the MATs should be
executed from the on-chip RAM. See section 21.6, Switching between User MAT and User
Conditions that Apply to Programming/Erasing
Procedure Program and Storable Area for Programming Data