DF2377RVFQ33W Renesas Electronics America, DF2377RVFQ33W Datasheet - Page 963

• Manufacturer Part Number: DF2377RVFQ33W
• Description: IC H8S MCU FLASH 3V 384K 144LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2377RVFQ33W

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 97
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 6x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

21.4.2
The user MAT can be programmed/erased in user program mode. (The user boot MAT cannot be
programmed/erased.)
Programming/erasing is executed by downloading the program in the microcomputer.
The overview flow is shown in figure 21.9.
High voltage is applied to internal flash memory during the programming/erasing processing.
Therefore, transition to reset or hardware standby must not be executed. Doing so may cause
damage or destroy flash memory. If reset is executed accidentally, reset must be released after the
reset input period, which is longer than normal 100 μs.
program data is prepared
transferred to the on-chip
Programming/erasing
Programming/erasing
When programming,
Programming/erasing
procedure program is
RAM and executed
User Program Mode
start
end
Figure 21.9 Programming/Erasing Overview Flow
1.
2.
Programming/erasing is executed only in the on-chip RAM.
However, if program data is in a consecutive area and can be
accessed by the MOV.B instruction of the CPU like SRAM or
ROM, the program data can be in an external space.
After programming/erasing is finished, it must be protected.
Section 21 Flash Memory (0.18-μm F-ZTAT Version)
Rev.7.00 Mar. 18, 2009 page 895 of 1136
REJ09B0109-0700